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Title: Phase selection and transition in Hf-rich hafnia-titania nanolaminates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3597321· OSTI ID:21538442

Hf-rich hafnia-titania nanolaminate films with five HfO{sub 2}-TiO{sub 2} bilayer architectures (0.64 to 0.94 Hf atom fraction) were sputter deposited on unheated fused silica substrates, annealed post-deposition from 573 to 1273 K, and analyzed by x-ray diffraction to study phase selection and transition. Isochronal annealing for 1 h intervals from 573 to 1173 K produces weak crystallization into monoclinic (m) HfO{sub 2} doped with Ti, i.e., m-Hf{sub 1-x}Ti{sub x}O{sub 2}. The amount of Ti incorporated into m-HfO{sub 2} depends upon both architecture and overall stoichiometry, but in all but the coarsest architecture, exceeds the bulk solubility limit of x = 0.05. Initial annealing at 1273 K produces significant crystallization into a biphasic structure, m-Hf{sub 1-x}Ti{sub x}O{sub 2} and orthorhombic (o) HfTiO{sub 4}. From bulk phase equilibrium considerations, o-HfTiO{sub 4} is expected to crystallize under conditions of interfacial bilayer mixing. However, upon further annealing at 1273 K, o-HfTiO{sub 4} proves to be unstable. o-HfTiO{sub 4} demixing inevitably occurs independent of architecture and stoichiometry, resulting in final crystallization products after 96 h at 1273 K that are m-Hf{sub 1-x}Ti{sub x}O{sub 2} with x {approx_equal} 0.05 and TiO{sub 2} doped with Hf. We suggest that o-HfTiO{sub 4} instability arises from a driving force to form domains similar to those found in the low temperature in/commensurate structures of ZrTiO{sub 4}. A detailed crystallographic group-subgroup analysis of the o (Pbcn) {yields} m (P2{sub 1}/c) transition shows that these domains can be represented by an orientation twin in the latter structure and their creation can be achieved by a single step second-order phase transition.

OSTI ID:
21538442
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3597321; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English