Enhanced critical temperature in epitaxial ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films on silicon

Journal Article · Mon Jan 03 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3532110· OSTI ID:21518236

Sambri, A; Gariglio, S; Torres Pardo, A; Triscone, J -M ^[1]; Stephan, O ^[2]; Reiner, J W; Ahn, C H ^[3]

---

1. Department of Condensed Matter Physics (DPMC), University of Geneva, 24 quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland)
2. Laboratoire de Physique des Solides, Universite Paris-Sud, CNRS-UMR 8502, Orsay 91405 (France)
3. Department of Applied Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520-8284 (United States)

The structural and electrical properties of epitaxial Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films grown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 deg. C increase of the Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

• OSTI ID: 21518236
• Journal Information: Applied Physics Letters, Vol. 98, Issue 1; Other Information: DOI: 10.1063/1.3532110; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRITICAL TEMPERATURE
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
FERROELECTRIC MATERIALS
LAYERS
LEAD COMPOUNDS
MOLECULAR BEAM EPITAXY
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SILICON
TEMPERATURE DEPENDENCE
THIN FILMS
TITANIUM COMPOUNDS
TWO-DIMENSIONAL CALCULATIONS
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIELECTRIC MATERIALS
DIFFRACTION
ELEMENTS
EPITAXY
FILMS
MATERIALS
PHYSICAL PROPERTIES
SCATTERING
SEMIMETALS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE