Electrical transport properties and magnetoresistance of polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)
Polycrystalline Fe{sub 3}O{sub 4} films were deposited on the p-Si wafers using reactive sputtering to form the polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures. A rectifying behavior was observed in the polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures due to the formation of p-n junction between Fe{sub 3}O{sub 4} and p-Si. The metal-insulator transition was observed, and the transition temperature decreases from 250 K at 100 mA to 110 K at 1 mA in the reverse range, but it keeps at 100 K in the forward range. The current-dependent magnetoresistance (MR) crossovers from negative to positive with different manners for the forward and reverse currents. The characteristic MR is thought to be caused by the rectifying effect and band structure of the Fe{sub 3}O{sub 4} near the interface of the heterostructures.
- OSTI ID:
- 21476260
- Journal Information:
- Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3429082; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
INTERFACES
IRON OXIDES
MAGNETORESISTANCE
PHASE TRANSFORMATIONS
P-N JUNCTIONS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
THIN FILMS
TRANSITION TEMPERATURE
CHALCOGENIDES
CRYSTALS
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
IRON COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS