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Title: Electrical transport properties and magnetoresistance of polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3429082· OSTI ID:21476260
; ;  [1]
  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)

Polycrystalline Fe{sub 3}O{sub 4} films were deposited on the p-Si wafers using reactive sputtering to form the polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures. A rectifying behavior was observed in the polycrystalline Fe{sub 3}O{sub 4}/p-Si heterostructures due to the formation of p-n junction between Fe{sub 3}O{sub 4} and p-Si. The metal-insulator transition was observed, and the transition temperature decreases from 250 K at 100 mA to 110 K at 1 mA in the reverse range, but it keeps at 100 K in the forward range. The current-dependent magnetoresistance (MR) crossovers from negative to positive with different manners for the forward and reverse currents. The characteristic MR is thought to be caused by the rectifying effect and band structure of the Fe{sub 3}O{sub 4} near the interface of the heterostructures.

OSTI ID:
21476260
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3429082; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English