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Title: Deposition of silicon dioxide films using an atmospheric pressure microplasma jet

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3108541· OSTI ID:21356099
; ; ; ;  [1]
  1. Research Group Reactive Plasmas, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

Organic and inorganic silicon dioxide films have been deposited by means of an atmospheric pressure microplasma jet. Tetramethylsilane (TMS), oxygen, and hexamethyldisiloxane (HMDSO) are injected into argon as plasma forming gases. In the case of TMS injection, inorganic films are deposited if an admixture of oxygen is used. In the case of HMDSO injection, inorganic films can be deposited at room temperature even without any oxygen admixture: at low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeters per minute at STP),<32 ppm], the SiO{sub x}H{sub z} films contain no carbon and exhibit oxygen-to-silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM,>32 ppm), SiO{sub x}C{sub y}H{sub z} with up to 21% of carbon are obtained. The transition from organic to inorganic film is confirmed by Fourier transform infrared spectroscopy. The deposition of inorganic SiO{sub 2} films from HMDSO without any oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.

OSTI ID:
21356099
Journal Information:
Journal of Applied Physics, Vol. 105, Issue 8; Other Information: DOI: 10.1063/1.3108541; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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