Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

Journal Article · Mon Mar 03 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2844880· OSTI ID:21120591

Raballand, V; Benedikt, J; Keudell, A von ^[1]

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1. Arbeitsgruppe Reaktive Plasmen, Fakultaet fuer Physik und Astronomie, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)

Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [<0.1 SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiO{sub x}H{sub z} films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM), SiO{sub x}C{sub y}H{sub z} films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition of inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.

• OSTI ID: 21120591
• Journal Information: Applied Physics Letters, Vol. 92, Issue 9; Other Information: DOI: 10.1063/1.2844880; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION SPECTROSCOPY
ARGON
ATMOSPHERIC PRESSURE
CARBON
DEPOSITION
FILMS
FLOW RATE
FOURIER TRANSFORMATION
INFRARED SPECTRA
ORGANIC SILICON COMPOUNDS
OXYGEN
PLASMA
PLASMA JETS
POLYMERIZATION
SILICON
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
X-RAY PHOTOELECTRON SPECTROSCOPY