Properties of GaAsN nanowires grown by magnetron-sputtering deposition
- Russian Academy of Sciences, St. Petersburg Physics and Technology Centre for Research and Education (Russian Federation)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- St. Petersburg State Technical University (Russian Federation)
The effectiveness of magnetron-sputtering deposition in an Ar-N{sub 2} plasma-forming mixture as a technique for the fabrication of arrays of GaAs{sub 1-x}N{sub x} nanowires (NWs) with typical diameters from 10 to 200 nm and lengths up to 3000 nm is demonstrated. Dependence of the growth character of NW on the parameters of the synthesis process, such as the size of Au droplets, deposition rate, and crystallographic orientation of the surface and the temperature of the substrate, is investigated. Analysis of the dependence of NW height on their diameter demonstrates that growth occurs predominantly by the diffusion mechanism. The nitrogen content is kept stable for growth temperatures in the range 400-500{sup o}C, being as high as 2.7%. For the substrate temperatures in the range 530-600{sup o}C, an abrupt drop in the nitrogen content in the alloy takes place. In the photoluminescence (PL) spectra of the samples obtained, a red shift of the emission band is observed, which is related to an increase in the nitrogen content. The growth-temperature dependence of the position of the luminescence band and the nitrogen content is determined. It is found that the PL intensity of samples with GaAsN NWs containing 2.7% nitrogen increases by a factor of 5-10 as compared to samples with planar layers, which is explained by the absence of structural defects in NWs.
- OSTI ID:
- 21260323
- Journal Information:
- Semiconductors, Vol. 43, Issue 7; Other Information: DOI: 10.1134/S106378260907015X; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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