Optical, magnetic, and transport behaviors of Ge{sub 1-x}Mn{sub x}Te ferromagnetic semiconductors grown by molecular-beam epitaxy

Journal Article · Mon Sep 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2980276· OSTI ID:21182637

Chen, W Q; Bi, J F; Teo, K L; Liew, T; Chong, T C ^[1]; Lim, S T; Sim, C H ^[2]

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1. Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608 (Singapore)
2. Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore 117456 (Singapore)

The optical, magnetic, and transport behaviors of Ge{sub 1-x}Mn{sub x}Te (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge{sub 1-x}Mn{sub x}Te crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie paramagnetic temperature of {theta}{sub p}{approx}180 K, which is consistent with the temperature-dependent resistivity {rho}(T) measurement. Anomalous Hall effect is clearly observed in the samples and can be attributed to extrinsic skew scattering based on the scaling relationship of {rho}{sub xy}{proportional_to}{rho}{sub xx}{sup 1.06}. The magnetoresistance of Ge{sub 1-x}Mn{sub x}Te is isotropic and displays a clear hysterestic loop at low temperature, which resembles that of giant-magnetoresistance granular system in solids.

• OSTI ID: 21182637
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 6; Other Information: DOI: 10.1063/1.2980276; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGED-PARTICLE TRANSPORT
CRYSTAL GROWTH
CURIE POINT
GERMANIUM COMPOUNDS
HALL EFFECT
HYSTERESIS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
PARAMAGNETISM
SEMICONDUCTOR MATERIALS
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
THIN FILMS
X-RAY DIFFRACTION