Ferromagnetism in Ge{sub 1-x}Cr{sub x}Te epilayers grown by molecular beam epitaxy

Journal Article · Mon Oct 09 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2360903· OSTI ID:20860991

Fukuma, Y; Asada, H; Taya, T; Irisa, T; Koyanagi, T ^[1]

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1. Yamaguchi Prefectural Industrial Technology Institute, 4-1 Asutopia, Ube 755-0195 (Japan)

IV-VI ferromagnetic semiconductor Ge{sub 1-x}Cr{sub x}Te has been grown on BaF{sub 2} (111) by molecular beam epitaxy. The ferromagnetism was clearly established by direct magnetization and Hall measurements. The experimental correlation between the anomalous Hall resistivity {rho}{sub xy} and the resistivity {rho}{sub xx}, {rho}{sub xy}{proportional_to}{rho}{sub xx}{sup 1.76}, is understood from the semiclassical nature of the charge carrier dynamics, suggesting that the ferromagnetism gives rise to p-d exchange interaction. The Curie temperature increases systematically from the substrate temperature T{sub S} of 300 to 250 to 200 deg. C and with increasing the Cr composition along with each T{sub S}.

• OSTI ID: 20860991
• Journal Information: Applied Physics Letters, Vol. 89, Issue 15; Other Information: DOI: 10.1063/1.2360903; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM FLUORIDES
CHARGE CARRIERS
CHROMIUM COMPOUNDS
CRYSTAL GROWTH
CURIE POINT
ELECTRONS
EXCHANGE INTERACTIONS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GERMANIUM COMPOUNDS
HALL EFFECT
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MOLECULAR BEAM EPITAXY
SEMICLASSICAL APPROXIMATION
SUBSTRATES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K