Formation of secondary electron cascades in single-crystalline plasma-deposited diamond upon exposure to femtosecond x-ray pulses

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2890158· OSTI ID:21134009

Gabrysch, M; Isberg, J ^[1]; Marklund, E; Caleman, C ^[2]; Hajdu, J ^[2]; Twitchen, D J ^[3]; Rudati, J; Emma, P J; Krejcik, P; Schlarb, H; Arthur, J; Brennan, S; Hastings, J ^[4]; Lindenberg, A M ^[5]; Falcone, R W ^[6]; Tschentscher, T ^[7]; Moffat, K ^[8]; Bucksbaum, P H ^[9]; Als-Nielsen, J ^[10]; Nelson, A J ^[11]

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1. Division of Electricity, Uppsala University, Box 534, 751 21 Uppsala (Sweden)
2. ICM Molecular Biophysics, Biomedical Centre, Uppsala University, Box 596, 751 24 Uppsala (Sweden)
3. Element Six Ltd, King's Ride Park, Ascot, Berkshire, SL5 8BP (United Kingdom)
4. Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States)
5. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
6. Department of Physics, University of California, Berkeley, California 94720 (United States)
7. Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg (Germany)
8. Consortium for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637 (United States)
9. PULSE Center, Stanford Linear Accelerator Center, Menlo Park, California 94025 (United States)
10. Niels Bohr Institute, Copenhagen University, 2100 Copenhagen O (Denmark)
11. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

Secondary electron cascades were measured in high purity single-crystalline chemical vapor deposition (CVD) diamond, following exposure to ultrashort hard x-ray pulses (140 fs full width at half maximum, 8.9 keV energy) from the Sub-Picosecond Pulse Source at the Stanford Linear Accelerator Center. We report measurements of the pair creation energy and of drift mobility of carriers in two CVD diamond crystals. This was done for the first time using femtosecond x-ray excitation. Values for the average pair creation energy were found to be 12.17{+-}0.57 and 11.81{+-}0.59 eV for the two crystals, respectively. These values are in good agreement with recent theoretical predictions. The average drift mobility of carriers, obtained by the best fit to device simulations, was {mu}{sub h}=2750 cm{sup 2}/V s for holes and was {mu}{sub e}=2760 cm{sup 2}/V s for electrons. These mobility values represent lower bounds for charge mobilities due to possible polarization of the samples. The results demonstrate outstanding electric properties and the enormous potential of diamond in ultrafast x-ray detectors.

• OSTI ID: 21134009
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 6; Other Information: DOI: 10.1063/1.2890158; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
DIAMONDS
ELECTRICAL PROPERTIES
ELECTRON EMISSION
ELECTRONS
EXCITATION
HARD X RADIATION
MONOCRYSTALS
PLASMA
POLARIZATION
PULSES
SEMICONDUCTOR MATERIALS
SIMULATION
STANFORD LINEAR ACCELERATOR CENTER