Growth of highly oriented HfO{sub 2} thin films of monoclinic phase on yttrium-stabilized ZrO{sub 2} and Si substrates by pulsed-laser deposition
- Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)
We report on the growth of highly oriented HfO{sub 2} thin films of monoclinic phase stabilized by 5% Co doping on (001) yttrium-stabilized zirconia (YSZ) using pulsed-laser deposition at 700 deg. C at an oxygen partial pressure of 10{sup -4} Torr. On the other hand, pure HfO{sub 2} of such quality did not grow on YSZ in wide range of growth parameters. Rutherford backscattering-ion channeling in this film showed a 24% minimum yield ({chi}{sub min}) indicating highly oriented film growth, while hardly any ion channeling was observed in the undoped sample. High-resolution transmission electron microscopy revealed a sharp interface, and no signature of Co clusters. Electron energy loss spectroscopy showed that Co is in the 2+ state. Attempts were also made to grow films on a (001) Si substrate, and the results showed a very low ion channeling yield ({approx}8%)
- OSTI ID:
- 20706481
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 24; Other Information: DOI: 10.1063/1.2142088; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
COBALT
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
ENERGY-LOSS SPECTROSCOPY
HAFNIUM OXIDES
ION CHANNELING
LASER RADIATION
MONOCLINIC LATTICES
OXYGEN
PARTIAL PRESSURE
PRESSURE RANGE MILLI PA
PULSED IRRADIATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
YTTRIUM COMPOUNDS
ZIRCONIUM OXIDES