Effects of growth temperature on the structural and optical properties of 1.55 {mu}m GaInNAsSb quantum wells grown on GaAs

Journal Article · Mon Jul 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1993772· OSTI ID:20702570

Bank, Seth R; Yuen, Homan B; Wistey, Mark A; Lordi, Vincenzo; Bae, Hopil P; Harris, Jr, James S ^[1]

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1. Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305 (United States)

We investigate the effects of growth temperature on the structural and optical properties of GaInNAsSb single quantum wells grown by molecular beam epitaxy. Peak room-temperature photoluminescence occurred at 1.65 {mu}m as-grown and at 1.55 {mu}m under optimal annealing conditions. Excellent room-temperature optical efficiency was observed from samples grown between 420 and 460 deg. C, with a maximum at 440 deg. C. However, luminescence was degraded approximately two orders of magnitude for a sample grown at 470 deg. C. High-resolution x-ray diffraction showed substantial structural degradation and a reduction in strain for the 470 deg. C sample. Low temperature photoluminescence measurements were also employed to study localization and quenching effects; both became more severe with increasing growth temperature.

• OSTI ID: 20702570
• Journal Information: Applied Physics Letters, Vol. 87, Issue 2; Other Information: DOI: 10.1063/1.1993772; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANTIMONY COMPOUNDS
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
X-RAY DIFFRACTION