Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants
- Sandia National Laboratories, P.O. Box 5800, MS-1083, Albuquerque, New Mexico 87185-1083 (United States)
- The Aerospace Corporation, P.O. Box 92957, M2-244, Los Angeles, California 90009-2957 (United States)
An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.
- OSTI ID:
- 20216374
- Journal Information:
- Journal of Applied Physics, Vol. 87, Issue 11; Other Information: PBD: 1 Jun 2000; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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