Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

Conference · Fri Oct 01 00:00:00 EDT 2010

OSTI ID:1027052

Petrosky, J C ^[1]; McClory, J W ^[1]; Bielejec, Edward Salvador; Foster, J C ^[1]

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1. Air Force Institute of Technology, Wright-Patterson Air Force Base, OH

Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1027052
• Report Number(s): SAND2010-6759C; TRN: US1105164
• Resource Relation: Conference: Proposed for presentation at the HEART Conference held March 28-April 1, 2011 in Orlando, FL.
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
74 ATOMIC AND MOLECULAR PHYSICS
BONDING
CAPACITORS
ELECTRIC CHARGES
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
HAFNIUM
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
IRRADIATION
NUCLEAR PHYSICS
OXIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SILICON
SILICON IONS