Stability of single and tandem junction a-Si:H solar cells grown using the ECR process
Conference
·
OSTI ID:20085569
The authors report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/A-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). They show that devices with high fill factors can be made using the H-ECR process. They also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.
- Research Organization:
- Iowa State Univ., Ames, IA (US)
- Sponsoring Organization:
- National Renewable Energy Laboratory
- OSTI ID:
- 20085569
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
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