Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells
- Tampere Univ. of Technology (Finland). Dept. of Physics
- Univ. of Helsinki (Finland). Dept. of Physics
- NASA Lewis Research Center, Cleveland, OH (United States)
Degradation characteristics for MBE grown Ga{sub 0.51}In{sub 0.49}P and GaAs single junction and Ga{sub 0.51}In{sub 0.49}P/GaAs tandem solar cells irradiated with 3 MeV and 10 MeV protons with fluences of 10{sup 10}--10{sup 13} cm{sup {minus}2} are reported. The cell degradation was characterized with illuminated current- voltage (I-V) and spectral response measurements. Minority carrier diffusion length damage coefficients for the GaAs cells for 3 MeV and 10 MeV protons were calculated as a function of fluence. The results were compared to the InP damage coefficients. In addition, photo-annealing recoverage effect at temperature 35--60 C under 1-sun AM0 illumination on the Ga{sub 0.51}In{sub 0.49}P cells are presented.
- OSTI ID:
- 304427
- Report Number(s):
- CONF-970953-; TRN: IM9905%%119
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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