Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

Huang, Ying-Yuan; Ok, Young-Woo; Madani, Keeya; Choi, Wookjin; Upadhyaya, Ajay D.; Upadhyaya, Vijaykumar D.; Rohatgi, Ajeet

doi:10.1016/j.solmat.2020.110585

Title: Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

Journal Article · Sat May 16 00:00:00 EDT 2020 · Solar Energy Materials and Solar Cells

DOI:https://doi.org/10.1016/j.solmat.2020.110585· OSTI ID:1893732

Huang, Ying-Yuan ^[1]; Ok, Young-Woo ^[1]; Madani, Keeya ^[1]; Choi, Wookjin ^[1]; Upadhyaya, Ajay D. ^[1]; Upadhyaya, Vijaykumar D. ^[1]; Rohatgi, Ajeet ^[1]

Georgia Institute of Technology, Atlanta, GA (United States)

We report on the fabrication of fully screen-printed bifacial large area (239 cm²) high-efficiency n-type Si solar cells with ion-implanted homogeneous boron emitter on the front side and carrier-selective tunnel oxide passivated contact (TOPCon) on the rear. Our phosphorus-doped poly-Si/SiO_x passivated contact with SiNx capping layer gave excellent surface passivation with a very low recombination current density (J_{0_TOPCon}) of ~1 fA/cm² after a simulated firing treatment at ~770 °C without metallization. After screen-printed and fire-through metallization on n-TOPCon with ~13% metal coverage, metallized J_{0_TOPCon} value increased to only ~5 fA/cm². In addition, homogenous boron implanted emitter (~180 Ω/sq) passivated with ALD Al₂O₃ layer capped with PECVD SiN_x/SiO_x double-layer antireflection (DLAR) coating gave excellent passivation with emitter recombination current density of ~12 fA/cm² prior to metallization. The industrial screen-printed, fire-through contacts with floating busbars on this boron emitter gave metallized emitter recombination current density of ~31 fA/cm². Furthermore, this resulted in a low-cost industrial screen-printed n-type bifacial Si solar cell with 22.6% efficiency and 702 mV open-circuit voltage (V_oc).

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Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0007554

OSTI ID:: 1893732

Alternate ID(s):: OSTI ID: 1619841; OSTI ID: 1893901

Journal Information:: Solar Energy Materials and Solar Cells, Vol. 214; ISSN 0927-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 23 works

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References (16)

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Title: Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

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