Intrinsic ferroelectricity in Y-doped HfO2 thin films

Yun, Yu; Buragohain, Pratyush; Li, Ming; Ahmadi, Zahra; Zhang, Yizhi; Li, Xin; Wang, Haohan; Li, Jing; Lu, Ping; Tao, Lingling; Wang, Haiyan; Shield, Jeffrey E.; Tsymbal, Evgeny Y.; Gruverman, Alexei; Xu, Xiaoshan

doi:10.1038/s41563-022-01282-6

Title: Intrinsic ferroelectricity in Y-doped HfO₂ thin films

Journal Article · Mon Jun 27 00:00:00 EDT 2022 · Nature Materials

DOI:https://doi.org/10.1038/s41563-022-01282-6· OSTI ID:1877162

Yun, Yu ^[1];

^[1]; Li, Ming ^[1]; Ahmadi, Zahra ^[1]; Zhang, Yizhi ^[2]; Li, Xin ^[1]; Wang, Haohan ^[1]; Li, Jing ^[1];

^[3];

^[1];

^[2]; Shield, Jeffrey E. ^[1];

^[1];

^[1]

Univ. of Nebraska, Lincoln, NE (United States)
Purdue Univ., West Lafayette, IN (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Ferroelectric HfO₂-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO₂-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO₂ films with a high degree of structural order (crystallinity). In this work, an out-of-plane polarization value of 50 μC cm^–2 has been observed at room temperature in Y-doped HfO₂(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm^–2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the $$Pca2_1$$ orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO₂-based materials, optimizing their performance in device applications.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0003525; ECCS-1917635; SC0019173; ECCS-2025298

OSTI ID:: 1877162

Report Number(s):: SAND2022-9345J; 708112

Journal Information:: Nature Materials, Vol. 21, Issue 8; ISSN 1476-1122

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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