Self-Aligned Selective Area Front Contacts on Poly-Si/SiOx Passivating Contact c-Si Solar Cells

Chen, Kejun; Hartweg, Barry; Woodhouse, Michael; Guthrey, Harvey; Nemeth, William; Theingi, San; Page, Matthew; Holman, Zachary C.; Stradins, Paul; Agarwal, Sumit; Young, David L.

doi:10.1109/jphotov.2022.3148719

Title: Self-Aligned Selective Area Front Contacts on Poly-Si/SiO_x Passivating Contact c-Si Solar Cells

Journal Article · Tue Mar 08 00:00:00 EST 2022 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/jphotov.2022.3148719· OSTI ID:1866765

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^[2]; Woodhouse, Michael ^[3];

^[3]; Nemeth, William ^[3]; Theingi, San ^[3]; Page, Matthew ^[3];

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Colorado School of Mines, Golden, CO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Arizona State Univ., Tempe, AZ (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

We report both polarity poly-Si/SiO_x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN_x,Al₂O₃, and stacks thereof) to study the repassivation of the etched n⁺ surface, and find that an SiN_x/Al₂O₃ passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN_x layer, and excellent chemical passivation property from Al₂O₃ in the form of atomic H. We demonstrate a front/back poly-Si/SiO_x passivating contact device, with an open-circuit voltage (V_oc) of 690 mV, short-circuit current density (J_sc) of 39.8 mA/cm², fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN_x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308; EE00034359

OSTI ID:: 1866765

Report Number(s):: NREL/JA-5900-82843; MainId:83616; UUID:f4d3f369-a2b8-41c2-8620-de567e5b0be2; MainAdminID:64456

Journal Information:: IEEE Journal of Photovoltaics, Vol. 12, Issue 3; ISSN 2156-3381

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Title: Self-Aligned Selective Area Front Contacts on Poly-Si/SiO_x Passivating Contact c-Si Solar Cells