Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. of Alabama, Huntsville, AL (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Vanderbilt Univ., Nashville, TN (United States)
This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE)
- Grant/Contract Number:
- NA0003525
- OSTI ID:
- 1841982
- Report Number(s):
- SAND-2022-0361J; 702506
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 69, Issue 3; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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