Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Frye, Clint D.; Donald, Scott B.; Reinhardt, Catherine; Voss, Lars F.; Harrison, Sara E.

doi:10.1116/6.0001123

Title: Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Journal Article · Thu Aug 19 00:00:00 EDT 2021 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0001123· OSTI ID:1833216

^[1]; Donald, Scott B. ^[1]; Reinhardt, Catherine ^[1]; Voss, Lars F. ^[1]; Harrison, Sara E. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

The choice of carrier wafer was found to significantly influence etch rates, selectivity, and morphology in GaN micropillar etching in a Cl₂-Ar high-density inductively coupled plasma. 7 × 7 mm² GaN on sapphire chips with a plasma-enhanced chemical vapor deposition SiO₂ hard mask was etched on top of 4-in. fused silica, silicon carbide, silicon, sapphire, aluminum nitride, and high purity aluminum carriers. Silicon and silicon carbide carriers reduced GaN:SiO₂ selectivity because incidental SiCl_x and CCl_x etch products from the carriers attack the SiO₂ mask. Aluminum nitride and high-purity aluminum carriers yielded the highest GaN:SiO₂ selectivities due to the deposition of Al-based etched by-products, while the highest GaN etch rate was achieved using the sapphire carrier since it was the most inert carrier and did not sink any Cl₂. Overall, results indicate that SiO₂ and Al may be used as passivation materials during GaN etching, as vertical profiles were achieved when SiO₂ or Al is redeposited from the fused silica and aluminum carriers, respectively. Floor pitting, trenching, sidewall roughness, and faceting were all influenced by carrier wafer type and will be discussed.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1833216

Report Number(s):: LLNL-JRNL-822020; 1034173

Journal Information:: Journal of Vacuum Science and Technology A, Vol. 39, Issue 5; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Title: Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

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