Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation

Khan, R. S.; Dirisaglik, F.; Gokirmak, A.; Silva, H.

doi:10.1063/1.5144606

Title: Resistance drift in Ge₂Sb₂Te₅ phase change memory line cells at low temperatures and its response to photoexcitation

Journal Article · Mon Jun 22 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5144606· OSTI ID:1801648

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Univ. of Connecticut, Storrs, CT (United States)
Univ. of Connecticut, Storrs, CT (United States); Eskisehir Osmangazi University (Turkey)

Resistance drift in amorphous Ge₂Sb₂Te₅ is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge₂Sb₂Te₅, which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.

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Research Organization:: Univ. of Connecticut, Storrs, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0005038

OSTI ID:: 1801648

Journal Information:: Applied Physics Letters, Vol. 116, Issue 25; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (23)

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays Boniardi, Mattia; Ielmini, Daniele; Lavizzari, Simone IEEE Transactions on Electron Devices, Vol. 57, Issue 10 https://doi.org/10.1109/TED.2010.2058771	journal	October 2010
Temperature dependence of the viscous flow of glass-forming melts in a broad temperature range Sanditov, D. S.; Munkueva, S. B. Glass Physics and Chemistry, Vol. 42, Issue 2 https://doi.org/10.1134/S1087659616020140	journal	March 2016
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 Boniardi, M.; Redaelli, A.; Pirovano, A. Journal of Applied Physics, Vol. 105, Issue 8 https://doi.org/10.1063/1.3109063	journal	April 2009
High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers Bakan, Gokhan; Khan, Niaz; Silva, Helena Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep02724	journal	September 2013
Physical origin of the resistance drift exponent in amorphous phase change materials Boniardi, Mattia; Ielmini, Daniele Applied Physics Letters, Vol. 98, Issue 24 https://doi.org/10.1063/1.3599559	journal	June 2011
Aging mechanisms in amorphous phase-change materials Raty, Jean Yves; Zhang, Wei; Luckas, Jennifer Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8467	journal	June 2015
Band gap widening with time induced by structural relaxation in amorphous Ge ₂ Sb ₂ Te ₅ films Fantini, P.; Brazzelli, S.; Cazzini, E. Applied Physics Letters, Vol. 100, Issue 1 https://doi.org/10.1063/1.3674311	journal	January 2012
Role of activation energy in resistance drift of amorphous phase change materials Wimmer, Martin; Kaes, Matthias; Dellen, Christian Frontiers in Physics, Vol. 2 https://doi.org/10.3389/fphy.2014.00075	journal	December 2014
Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition Kim, YoungKuk; Jeong, K.; Cho, M. -H. Applied Physics Letters, Vol. 90, Issue 17 https://doi.org/10.1063/1.2722203	journal	April 2007
Laser‐induced crystallization phenomena in GeTe‐based alloys. I. Characterization of nucleation and growth Coombs, J. H.; Jongenelis, A. P. J. M.; van Es‐Spiekman, W. Journal of Applied Physics, Vol. 78, Issue 8 https://doi.org/10.1063/1.359779	journal	October 1995
High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift Dirisaglik, Faruk; Bakan, Gokhan; Jurado, Zoila Nanoscale, Vol. 7, Issue 40 https://doi.org/10.1039/C5NR05512A	journal	January 2015
Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage Kim, SangBum; Lee, Byoungil; Asheghi, Mehdi IEEE Transactions on Electron Devices, Vol. 58, Issue 3 https://doi.org/10.1109/TED.2010.2095502	journal	March 2011
Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases Lee, Bong-Sub; Abelson, John R.; Bishop, Stephen G. Journal of Applied Physics, Vol. 97, Issue 9 https://doi.org/10.1063/1.1884248	journal	May 2005
Phase Change Memory Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum Proceedings of the IEEE, Vol. 98, Issue 12 https://doi.org/10.1109/JPROC.2010.2070050	journal	December 2010
Unified mechanisms for structural relaxation and crystallization in phase-change memory devices Ielmini, D.; Boniardi, M.; Lacaita, A. L. Microelectronic Engineering, Vol. 86, Issue 7-9 https://doi.org/10.1016/j.mee.2009.03.085	journal	July 2009
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials Pirovano, A.; Lacaita, A. L.; Pellizzer, F. IEEE Transactions on Electron Devices, Vol. 51, Issue 5 https://doi.org/10.1109/TED.2004.825805	journal	May 2004
Modeling of Set and Reset Operations of Phase-Change Memory Cells Faraclas, Azer; Williams, Nicholas; Gokirmak, Ali IEEE Electron Device Letters, Vol. 32, Issue 12 https://doi.org/10.1109/LED.2011.2168374	journal	December 2011
Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices Mitra, Mukut; Jung, Yeonwoong; Gianola, Daniel S. Applied Physics Letters, Vol. 96, Issue 22 https://doi.org/10.1063/1.3447941	journal	May 2010
Reversible Electrical Switching Phenomena in Disordered Structures Ovshinsky, Stanford R. Physical Review Letters, Vol. 21, Issue 20 https://doi.org/10.1103/PhysRevLett.21.1450	journal	November 1968
Electronic mechanism for resistance drift in phase-change memory materials: link to persistent photoconductivity Elliott, S. R. Journal of Physics D: Applied Physics, Vol. 53, Issue 21 https://doi.org/10.1088/1361-6463/ab795e	journal	March 2020
Fundamental drift of parameters in chalcogenide phase change memory Karpov, I. V.; Mitra, M.; Kau, D. Journal of Applied Physics, Vol. 102, Issue 12 https://doi.org/10.1063/1.2825650	journal	December 2007
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 Ielmini, D.; Lavizzari, S.; Sharma, D. Applied Physics Letters, Vol. 92, Issue 19 https://doi.org/10.1063/1.2930680	journal	May 2008
Layered tunnel barriers for nonvolatile memory devices Likharev, Konstantin K. Applied Physics Letters, Vol. 73, Issue 15 https://doi.org/10.1063/1.122402	journal	October 1998

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Cryogenics
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Experiment design
Photoexcitations
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Title: Resistance drift in Ge2Sb2Te5 phase change memory line cells at low temperatures and its response to photoexcitation

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