Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

Verma, Darpan; Adnan, Md Mohsinur Rahman; Rahman, Mohammad Wahidur; Rajan, Siddharth; Myers, Roberto C.

doi:10.1063/1.5144778

Title: Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

Journal Article · Tue May 19 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5144778· OSTI ID:1799130

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The Ohio State University (United States). Department of Materials Science Engineering
The Ohio State University (United States). Department of Electrical and Computer Engineering
The Ohio State University (United States). Department of Materials Science Engineering; The Ohio State University (United States). Department of Electrical and Computer Engineering

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (V_l), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of V_l vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias (V_bi) is estimated by extrapolating V_l at V=0, which, when compared with independent C-V measurements, indicates an overall ±0.31 V accuracy of V_l. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high-voltage devices.

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Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001036

OSTI ID:: 1799130

Alternate ID(s):: OSTI ID: 1630180

Journal Information:: Applied Physics Letters, Vol. 116, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

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