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Title: Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping

Journal Article · · Solar Energy Materials and Solar Cells
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  1. Georgia Institute of Technology, Atlanta, GA (United States)
  2. Korea Institute of Energy Research, Daejeon (Korea)
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In this paper, we report on the direct comparison of Al2O3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al2O3 layers with SiNx capping have very similar chemical composition, hydrogen concentration at the Al2O3/Si interface, and interface defect density (Dit), but the ALD film has slightly higher negative fixed charge (Qf) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm2 lower emitter saturation current densities (J0e) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiNx/Al2O3/p+/n/n+ passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J0e has negligible effect on cell efficiency. Furthermore, APCVD Al2O3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al2O3 passivated n-type Si solar cells.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008562; EE0007554
OSTI ID:
1696800
Alternate ID(s):
OSTI ID: 1657326; OSTI ID: 1893904; OSTI ID: 1895318
Journal Information:
Solar Energy Materials and Solar Cells, Vol. 218; ISSN 0927-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
Al2O3
surface passivation
boron emitter
APCVD
Si solar cell