Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Xiao, Zhigang; Kisslinger, Kim; Chance, Sam; Banks, Samuel

doi:10.3390/cryst10020136

Title: Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Journal Article · Sun Feb 23 00:00:00 EST 2020 · Crystals

DOI:https://doi.org/10.3390/cryst10020136· OSTI ID:1608777

Xiao, Zhigang ^[1]; Kisslinger, Kim ^[2]; Chance, Sam ^[1]; Banks, Samuel ^[1]

Alabama A&M Univ., Normal, AL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

We report the growth of nanoscale hafnium dioxide (HfO₂) and zirconium dioxide (ZrO₂) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO₂ and ZrO₂ thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH₃)₂]₄) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH₃)₂]₄) were used as the precursors, while O₂ gas was used as the reactive gas. The PE-ALD-grown HfO₂ and ZrO₂ thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO₂ film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO₂ film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO₂ and ZrO₂ films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO₂ and ZrO₂ thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO₂ and ZrO₂ thin films were compared.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1608777

Report Number(s):: BNL-213810-2020-JAAM; CRYSBC

Journal Information:: Crystals, Vol. 10, Issue 2; ISSN 2073-4352

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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77 NANOSCIENCE AND NANOTECHNOLOGY
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complementary metal-oxide semiconductor (CMOS) integrated circuits
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Title: Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

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