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Title: AlN/SiC MEMS for High-Temperature Applications

Journal Article · · Journal of Microelectromechanical Systems

The creation of microelectromechanical systems (MEMS) that can operate through elevated temperatures would enable systems diagnostics and controls that are not possible with conventional-off-the-shelf components. The integration of silicon carbide (SiC) with aluminum nitride (AlN) has led to the fabrication of devices that can withstand elevated temperature anneals >935 °C. The results from a piezoelectric micromachined ultrasonic transducer (PMUT) and a microresonator are reported as demonstrations of the fabrication process. Testing the PMUT response before and after annealing at 935 °C led to a change in resonant frequency of less than 1%, which is attributable to a shift in film stress. The response of the microresonator was RF tested in situ up to 500 °C and showed no degradation in its electromechanical coupling coefficient. The resonant frequency decreased with temperature due to the temperature coefficient of Young's modulus, and the quality factor decreased with temperature and remained unrecoverable upon cooling. The degradation in the quality factor is suspected to be a result of oxidation of the titatium nitride (TiN) top electrode, which increases the resistivity and leads to an unrecoverable reduction in the quality factor. As a result, the robust piezoelectric response of AlN at these temperatures show that AlN is a very promising candidate for elevated temperature applications. [2019-0019]

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1544806
Report Number(s):
SAND-2019-8361J; 677603
Journal Information:
Journal of Microelectromechanical Systems, Vol. 28, Issue 5; ISSN 1057-7157
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

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