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Title: Analysis of the ZnTe:Cu Contact on CdS/CdTe Solar Cells: Preprint

Conference ·
DOI:https://doi.org/10.1557/PROC-763-B3.4· OSTI ID:15004689

We report on the recent use of cathodoluminescence (CL) to probe the depth-dependent changes in radiative recombination that occur in CdTe devices during ZnTe:Cu contacting procedures. These types of CL measurements may be useful to assist in linking impurity diffusion (e.g., Cu) from the contact with depth-dependent variation in electrical activation within the CdTe layer. Variable-energy CL suggests that diffusion from the ZnTe:Cu contact interface may assist in reducing donors levels in the CdTe bulk, and thereby yield p-type material in the region near the contact. CL analysis near abrupt metal discontinuities provides estimates of diffusion lengths for carriers associated with both excitonic and donor-to-acceptor pair recombination. Finally, CL measurements at increasing excitation levels (i.e., increasing electron-beam current) provides estimates of the defect state density, as well as providing evidence that discrete multiple defect bands may exist in CdTe prior to contacting.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
15004689
Report Number(s):
NREL/CP-520-33940; TRN: US200320%%379
Resource Relation:
Journal Volume: 763; Conference: Prepared for the 2003 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/21/2003--04/25/2003; Other Information: PBD: 1 Apr 2003
Country of Publication:
United States
Language:
English