Magnetoelectric memory cells with domain-wall-mediated switching

Patent · Tue Oct 02 00:00:00 EDT 2018

OSTI ID:1489788

Belashchenko, Kirill D.; Tchernyshyov, Oleg; Kovalev, Alexey; Nikonov, Dmitri E.

A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

• Research Organization: Univ. of Nebraska, Lincoln, NE (United States); THE JOHN HOPKINS UNIVERSITY, Baltimore, MD (United States); INTEL CORPORATION, Santa Clara, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: FG02-08ER46544; SC0014189
• Assignee: BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA (Lincoln, NE); THE JOHN HOPKINS UNIVERSITY (Baltimore, MD); INTEL CORPORATION (Santa Clara, CA)
• Patent Number(s): 10,090,034
• Application Number: 15/807,369
• OSTI ID: 1489788
• Resource Relation: Patent File Date: 2017 Nov 08
• Country of Publication: United States
• Language: English

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