Thin film deposition of conducting tin oxide from TMT in a low pressure glow discharge diode reactor
- UPMC-ENSCP, Paris, (France)
This work concerns the study of the deposition mechanisms of tin oxide and its characterization from a mixture of Ar + TMT + O{sub 2} in a RF glow discharge diode reactor at low pressure (0.1-0.3 mbar). The gaseous mixture is introduced in the center of the HV electrode and the glass substrates are placed on the grounded electrode. With the help of an optical fiber fixed in front of a quartz window the discharge was characterized in line. The deposited material is characterized by different surface diagnostic techniques such as XPS, FTIR, SEM/EDX. The sheet conductivity of the thin films were measured by a 4 point-probe measurements. The first step of this work has been to optimize the working parameters (such as the gas composition, the interelectrode gap, the injected power and the treatment time) in order to obtain SnO{sub 2{minus}x}C{sub y} films with reproducible properties. While the second step was devoted to adjust the partial pressure of oxygen in TMT + O{sub 2} + Ar mixture in the aim to decrease the carbon content of the deposit. The carbon-free in oxide films obtained in this way (Sn/O{approx}0.5) present conductivities varying from 10{sup {minus}4} S.cm{sup {minus}1} up to 10{sup 2} S.cm{sup {minus}1} with thicknesses in the range of 500 to 20000 {angstrom}. The conductivity of the films can be improved by either an annealing process in nitrogen gas or by a hydrogen plasma post-treatment. Moreover, in the case of the latter, {beta}Sn crystalline phase has been identified. Finally, the transparent tin oxide films being prepared at relatively low temperature (=100{degrees}C) can be very well realized on polymeric substrates.
- OSTI ID:
- 141535
- Report Number(s):
- CONF-930304-; TRN: 93:003688-1215
- Resource Relation:
- Conference: 205. American Chemical Society national meeting, Denver, CO (United States), 28 Mar - 2 Apr 1993; Other Information: PBD: 1993; Related Information: Is Part Of 205th ACS national meeting; PB: 1951 p.
- Country of Publication:
- United States
- Language:
- English
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