Lattice matched crystalline substrates for cubic nitride semiconductor growth

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

Title: Lattice matched crystalline substrates for cubic nitride semiconductor growth

Patent · Tue Feb 24 00:00:00 EST 2015

OSTI ID:1171096

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

View Patent

Cite

Export

Save

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 8,961,687

Application Number:: 12/551,430

OSTI ID:: 1171096

Resource Relation:: Patent File Date: 2009 Aug 31

Country of Publication:: United States

Language:: English

References (97)

Method of treating lignocellulose materials to produce ruminant feed Bender, Robert https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/4136207 US Patent Document 4,136,207	patent	January 1979
Group-III nitride based light emitter Ohuchi, Youichiro; Okagawa, Hiroaki; Watabe, Shinichi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5793061 US Patent Document 5,793,061	patent	August 1998
Miniature self-pumped monolithically integrated solid state laser DenBaars, Steven P.; Speck, James S.; Church, Charles H. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5796771 US Patent Document 5,796,771	patent	August 1998
Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6281426 US Patent Document 6,281,426	patent	August 2001
Bipolar transistor, semiconductor light emitting device and semiconductor device Fujimoto, Hidetoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6498050 US Patent Document 6,498,050	patent	December 2002
Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys Narayan, Jagdish; Sharma, Ajay; Muth, John https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6518077 US Patent Document 6,518,077	patent	February 2003
Bipolar transistor, semiconductor light emitting device and semiconductor device Fujimoto, Hidetoshi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6605486 US Patent Document 6,605,486	patent	August 2003
Nitride-based semiconductor element and method of forming nitride-based semiconductor Kunisato, Tatsuya; Hayashi, Nobuhiko; Ohbo, Hiroki https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6759139 US Patent Document 6,759,139	patent	July 2004
Spinel substrate and heteroepitaxial growth of III-V materials thereon Kokta, Milan; Ong, Hung https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6844084 US Patent Document 6,844,084	patent	January 2005
High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same Iles, Peter A.; Ho, Frank; Yeh, Yea-Chuan Milton https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6951819 US Patent Document 6,951,819	patent	October 2005
Nitride semiconductor light emitting element and optical device containing it Tsuda, Yuhzoh; Ito, Shigetoshi; Araki, Masahiro https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7012283 US Patent Document 7,012,283	patent	March 2006
Multi-junction photovoltaic cell having buffer layers for the growth of single crystal boron compounds Narayanan, Authi A.; Schwartz, Joel https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7122733 US Patent Document 7,122,733	patent	October 2006
Group-III nitride semiconductor light-emitting device and production method thereof Udagawa, Takashi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7211836 US Patent Document 7,211,836	patent	May 2007
Technique for the growth of planar semi-polar gallium nitride Baker, Troy J.; Haskell, Benjamin A.; Fini, Paul T. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7220324 US Patent Document 7,220,324	patent	May 2007
Light emitting apparatus and method of manufacturing the same Izuno, Kunihiro; Matsumoto, Kouki; Nagahama, Shinichi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7390684 US Patent Document 7,390,684	patent	June 2008
Method for rapid, controllable growth and thickness, of epitaxial silicon films Wang, Qi; Stradins, Paul; Teplin, Charles https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7601215 US Patent Document 7,601,215	patent	October 2009
Method for producing multijunction solar cell Goto, Hajime; Motohisa, Junichi; Fukui, Takashi https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7615400 US Patent Document 7,615,400	patent	November 2009
Lattice matched semiconductor growth on crystalline metallic substrates Norman, Andrew; Ptak, Aaron Joseph; McMahon, William Edwin https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8575471 US Patent Document 8,575,471	patent	November 2013
Photonic biasing and integrated solar charging networks for integrated circuits Bosco, Bruce Allen; Emrick, Rudy M.; Ranganathan, Sowmyan https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030015728 US Patent Application 09/905902; 20030015728	patent-application	January 2003
Zymomonas pentose-sugar fermenting strains and uses thereof Zhang, Min; Chou, Yat-Chen; Howe, William https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030162271 US Patent Application 10/134655; 20030162271	patent-application	August 2003
[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices Goyal, Amit https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080230779 US Patent Document 12/011454; 20080230779	patent-application	September 2008
Semiconductor-based, large-area, flexible, electronic devices on <100> oriented substrates Goyal, Amit https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080265255 US Patent Document 12/079068; 20080265255	patent-application	October 2008
Light Emitting Device Pan, Shaoher X. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090032799 US Patent Application 12/177144; 20090032799	patent-application	February 2009
Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells Stan, Mark; Cornfeld, Arthur; Newman, Fred https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090078311 US Patent Application 12/102550; 20090078311	patent-application	March 2009
{100}<100> or 45 Degrees-Rotated {100}<100>, Semiconductor-Based, Large-Area, Flexible, Electronic Devices Goyal, Amit https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110062446 US Patent Application 12/011450; 20110062446	patent-application	March 2011
Growth of Coincident Site Lattice Matched Semiconductor Layers and Devices on Crystalline Substrates Norman, Andrew G.; Ptak, Aaron J. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110147791 US Patent Application 12/643127; 20110147791	patent-application	June 2011
Epitaxial growth of GaAs/NiAl/GaAs heterostructures Sands, T.; Harbison, J. P.; Chan, W. K. Applied Physics Letters, Vol. 52, Issue 15 https://doi.org/10.1063/1.99162	journal	April 1988
Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE Sands, T.; Harbison, J. P.; Tabatabaie, N. Surface Science, Vol. 228, Issue 1-3, p. 1-8 https://doi.org/10.1016/0039-6028(90)90245-4	journal	April 1990
GdN (111) heteroepitaxy on GaN (0001) by N₂ plasma and NH₃ molecular beam epitaxy Scarpulla, M. A.; Gallinat, C. S.; Mack, S. Journal of Crystal Growth, Vol. 311, Issue 5, p. 1239-1244 https://doi.org/10.1016/j.jcrysgro.2008.12.050	journal	February 2009
Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates Sun, C. J.; Yang, J. W.; Lim, B. W. Applied Physics Letters, Vol. 70, Issue 11 https://doi.org/10.1063/1.118557	journal	March 1997
MBE growth of GaN on MgO substrate Suzuki, Ryotaro; Kawaharazuka, Atsushi; Horikoshi, Yoshiji Journal of Crystal Growth, Vol. 301-302, p. 478-481 https://doi.org/10.1016/j.jcrysgro.2006.11.095	journal	April 2007
Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy Tadayon, Bijan; Tadayon, Saied; Spencer, M. G. Applied Physics Letters, Vol. 53, Issue 26 https://doi.org/10.1063/1.100188	journal	December 1988
Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes Tinjod, F.; de Mierry, P.; Lancefield, D. Journal of Crystal Growth, Vol. 285, Issue 4, p. 450-458 https://doi.org/10.1016/j.jcrysgro.2005.08.059	journal	December 2005
Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer Tolle, J.; Roucka, R.; Tsong, I. S. T. Applied Physics Letters, Vol. 82, Issue 15 https://doi.org/10.1063/1.1566099	journal	April 2003
Initial stages of InN thin film growth onto MgAl₂O₄(111) and α-Al₂O₃(00·1) substrates Tsuchiya, Tohru; Ohnishi, Masato; Wakahara, Akihiro Journal of Crystal Growth, Vol. 220, Issue 3, p. 191-196 https://doi.org/10.1016/S0022-0248(00)00548-0	journal	December 2000
Band parameters for nitrogen-containing semiconductors Vurgaftman, I.; Meyer, J. R. Journal of Applied Physics, Vol. 94, Issue 6 https://doi.org/10.1063/1.1600519	journal	September 2003
Microstructure evolution of GaN buffer layer on MgAl₂O₄ substrate Yang, H.-F.; Han, P.-D.; Cheng, L.-S. Journal of Crystal Growth, Vol. 193, Issue 4, p. 478-483 https://doi.org/10.1016/S0022-0248(98)00516-8	journal	October 1998
Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates Yamada, K.; Asahi, H.; Tampo, H. Applied Physics Letters, Vol. 78, Issue 19 https://doi.org/10.1063/1.1371528	journal	May 2001
Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy Yao, Takafumi; Nakahara, Hiroaki; Matuhata, Hirofumi Journal of Crystal Growth, Vol. 111, Issue 1-4, p. 221-227 https://doi.org/10.1016/0022-0248(91)90975-B	journal	May 1991
Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions Wang, Tao; Chen, Long-Qing; Liu, Zi-Kui Metallurgical and Materials Transactions A, Vol. 38, Issue 3 https://doi.org/10.1007/s11661-007-9091-z	journal	April 2007
Transmission electron microscope study on electrodeposited Gd₂O₃ and Gd₂Zr₂O₇ buffer layers for YBa₂Cu₃O_7−δ superconductors Zhao, Wenjun; Norman, Andrew; Phok, Sovannary Physica C: Superconductivity and its Applications, Vol. 468, Issue 14, p. 1092-1096 https://doi.org/10.1016/j.physc.2008.05.282	journal	July 2008
Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates Andrianov, A. V.; Yamada, K.; Tampo, H. Semiconductors, Vol. 36, Issue 8 https://doi.org/10.1134/1.1500464	journal	August 2002
Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides As, D. J.; Lischka, K. physica status solidi (a), Vol. 176, Issue 1, p. 475-485 https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<475::AID-PSSA475>3.0.CO;2-6	journal	November 1999
Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE Asahi, H.; Tampo, H.; Yamada, K. physica status solidi (a), Vol. 188, Issue 2 https://doi.org/10.1002/1521-396X(200112)188:2<601::AID-PSSA601>3.0.CO;2-2	journal	December 2001
Thin film poly III–V space solar cells Bailey, Sheila G.; Wilt, David M.; McNatt, Jeremiah S. 2008 33rd IEEE Photovolatic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC.2008.4922653	conference	May 2008
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates Baker, Troy J.; Haskell, Benjamin A.; Wu, Feng Japanese Journal of Applied Physics, Vol. 44, Issue 7L https://doi.org/10.1143/JJAP.44.L920	journal	July 2005
Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges Baur, C.; Bett, A. W.; Dimroth, F. Journal of Solar Energy Engineering, Vol. 129, Issue 3 https://doi.org/10.1115/1.2735346	journal	April 2006
The Promise and Challenge of Solid-State Lighting Bergh, Arpad; Craford, George; Duggal, Anil Physics Today, Vol. 54, Issue 12 https://doi.org/10.1063/1.1445547	journal	December 2001
Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures Oh, J. E.; Bhattacharya, P. K.; Singh, J. Surface Science, Vol. 228, Issue 1-3 https://doi.org/10.1016/0039-6028(90)90248-7	journal	April 1990
Growth and characterization of GaAs/Al/GaAs heterostructures Bhattacharya, P.; Oh, J. E.; Singh, J. Journal of Applied Physics, Vol. 67, Issue 8 https://doi.org/10.1063/1.345035	journal	April 1990
Reflection high-energy electron diffraction studies of epitaxial oxide seed-layer growth on rolling-assisted biaxially textured substrate Ni(001): The role of surface structure and chemistry Cantoni, C.; Christen, D. K.; Feenstra, R. Applied Physics Letters, Vol. 79, Issue 19 https://doi.org/10.1063/1.1407857	journal	November 2001
Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs Cho, A. Y.; Dernier, P. D. Journal of Applied Physics, Vol. 49, Issue 6 https://doi.org/10.1063/1.325286	journal	June 1978
On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate Efimov, A. N.; Lebedev, A. O.; Lundin, V. V. Crystallography Reports, Vol. 45, Issue 2 https://doi.org/10.1134/1.171188	journal	March 2000
Material considerations for terawatt level deployment of photovoltaics Feltrin, Andrea; Freundlich, Alex Renewable Energy, Vol. 33, Issue 2, p. 180-185 https://doi.org/10.1016/j.renene.2007.05.024	journal	February 2008
Properties of epitaxial GaN on refractory metal substrates Freitas, Jaime A.; Rowland, Larry B.; Kim, Jihyun Applied Physics Letters, Vol. 90, Issue 9 https://doi.org/10.1063/1.2709512	journal	February 2007
III N V semiconductors for solar photovoltaic applications Geisz, J. F.; Friedman, D. J. Semiconductor Science and Technology, Vol. 17, Issue 8 https://doi.org/10.1088/0268-1242/17/8/305	journal	July 2002
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W. Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502 https://doi.org/10.1063/1.2753729	journal	July 2007
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions Geisz, J. F.; Friedman, D. J.; Ward, J. S. Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505 https://doi.org/10.1063/1.2988497	journal	September 2008
Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates George, T.; Jacobsohn, E.; Pike, W. T. Applied Physics Letters, Vol. 68, Issue 3 https://doi.org/10.1063/1.116708	journal	January 1996
The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors Goyal, Amit; Paranthaman, M. Parans; Schoop, U. MRS Bulletin, Vol. 29, Issue 8 https://doi.org/10.1557/mrs2004.161	journal	August 2004
Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100) Haworth, L.; Lu, J.; Westwood, D. I. Applied Surface Science, Vol. 166, Issue 1-4, p. 418-422 https://doi.org/10.1016/S0169-4332(00)00460-8	journal	October 2000
Epitaxial growth of AlN films on single-crystalline Ta substrates Hirata, S.; Okamoto, K.; Inoue, S. Journal of Solid State Chemistry, Vol. 180, Issue 8, p. 2335-2339 https://doi.org/10.1016/j.jssc.2007.06.008	journal	August 2007
Nucleation and growth of epitaxial ZrB₂(0001) on Si(111) Hu, C.-W.; Chizmeshya, A. V. G.; Tolle, J. Journal of Crystal Growth, Vol. 267, Issue 3-4, p. 554-563 https://doi.org/10.1016/j.jcrysgro.2004.04.020	journal	July 2004
Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition Inoue, S.; Okamoto, K.; Matsuki, N. Journal of Crystal Growth, Vol. 289, Issue 2, p. 574-577 https://doi.org/10.1016/j.jcrysgro.2005.12.072	journal	April 2006
Epitaxial growth of GaN on copper substrates Inoue, S.; Okamoto, K.; Matsuki, N. Applied Physics Letters, Vol. 88, Issue 26 https://doi.org/10.1063/1.2213178	journal	June 2006
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates Asif Khan, M.; Sun, C. J.; Yang, J. W. Applied Physics Letters, Vol. 69, Issue 16 https://doi.org/10.1063/1.117656	journal	October 1996
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells King, R. R.; Law, D. C.; Edmondson, K. M. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2734507	journal	April 2007
Record breakers King, Richard R. Nature Photonics, Vol. 2, Issue 5 https://doi.org/10.1038/nphoton.2008.68	journal	May 2008
Bowing parameter of zincblende In_xGa_1−xN Kuo, Yen-Kuang; Chu, Han-Yi; Yen, Sheng-Horng Optics Communications, Vol. 280, Issue 1, p. 153-156 https://doi.org/10.1016/j.optcom.2007.07.058	journal	December 2007
Properties of GaN epitaxial layer grown on (111) MgAl₂O₄ substrate Kuramata, Akito; Horino, Kazuhiko; Domen, Kay Solid-State Electronics, Vol. 41, Issue 2, p. 251-254 https://doi.org/10.1016/S0038-1101(96)00211-0	journal	February 1997
Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells Li, Shunfeng; Schörmann, Jörg; As, Donat J. Applied Physics Letters, Vol. 90, Issue 7 https://doi.org/10.1063/1.2475564	journal	February 2007
Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl ₂ O ₄ Substrates by Pulsed-Laser Deposition Li, Guoqiang; Ohta, Jitsuo; Okamoto, Koichiro Japanese Journal of Applied Physics, Vol. 45, Issue No. 17 https://doi.org/10.1143/JJAP.45.L457	journal	April 2006
Epitaxial growth of single-crystalline AlN films on tungsten substrates Li, Guoqiang; Kim, Tae-Won; Inoue, Shigeru Applied Physics Letters, Vol. 89, Issue 24 https://doi.org/10.1063/1.2404588	journal	December 2006
Suppression of domain formation in GaN layers grown on Ge(111) Lieten, R. R.; Degroote, S.; Leys, M. Journal of Crystal Growth, Vol. 311, Issue 5, p. 1306-1310 https://doi.org/10.1016/j.jcrysgro.2008.11.077	journal	February 2009
Morphological and chemical considerations for the epitaxy of metals on semiconductors Ludeke, R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 2, Issue 3 https://doi.org/10.1116/1.582833	journal	January 1984
Epitaxial relationships between Al, Ag and GaAs{001} surfaces Massies, Jean; Linh, Nuyen T. Surface Science, Vol. 114, Issue 1, p. 147-160 https://doi.org/10.1016/0039-6028(82)90462-9	journal	January 1982
Growth and properties of GaN and AlN layers on silver substrates Mikulics, Martin; Kočan, Martin; Rizzi, Angela Applied Physics Letters, Vol. 87, Issue 21 https://doi.org/10.1063/1.2135879	journal	November 2005
Growth of InN films on spinel substrates by pulsed laser deposition Mitamura, K.; Ohta, J.; Fujioka, H. physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 5 https://doi.org/10.1002/pssr.200701138	journal	October 2007
Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates Nikishin, S. A.; Temkin, H.; Antipov, V. G. Applied Physics Letters, Vol. 72, Issue 19 https://doi.org/10.1063/1.121357	journal	May 1998
Epitaxial YBa2Cu3O7 on Biaxially Textured Nickel (001): An Approach to Superconducting Tapes with High Critical Current Density Norton, D. P.; Goyal, A.; Budai, J. D. Science, Vol. 274, Issue 5288 https://doi.org/10.1126/science.274.5288.755	journal	November 1996
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate Pacheco-Salazar, D. G.; Leite, J. R.; Cerdeira, F. Semiconductor Science and Technology, Vol. 21, Issue 7 https://doi.org/10.1088/0268-1242/21/7/003	journal	May 2006
Epitaxy of Dissimilar Materials Palmstrom, C. J. Annual Review of Materials Science, Vol. 25, Issue 1 https://doi.org/10.1146/annurev.ms.25.080195.002133	journal	August 1995
Increasing cube texture in high purity aluminium foils for capacitors Pan, F. S.; Peng, J.; Tang, A. T. Materials Science and Technology, Vol. 21, Issue 12 https://doi.org/10.1179/174328405X71648	journal	December 2005
Research challenges to ultra-efficient inorganic solid-state lighting Phillips, J. M.; Coltrin, M. E.; Crawford, M. H. Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333 https://doi.org/10.1002/lpor.200710019	journal	December 2007
The growth of epitaxial aluminium on As containing compound semiconductors Pilkington, S. J.; Missous, M. Journal of Crystal Growth, Vol. 196, Issue 1, p. 1-12 https://doi.org/10.1016/S0022-0248(98)00784-2	journal	January 1999
Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures Sacks, R. N.; Qin, L.; Jazwiecki, M. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 3 https://doi.org/10.1116/1.590742	journal	January 1999
General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV) Kuznetsov, G. F.; Aitkhozhin, S. A. Crystallography Reports, Vol. 47, Issue 3 https://doi.org/10.1134/1.1481944	journal	May 2002
Domain epitaxy: A unified paradigm for thin film growth Narayan, J.; Larson, B. C. Journal of Applied Physics, Vol. 93, Issue 1 https://doi.org/10.1063/1.1528301	journal	January 2003
Low cost, single crystal-like substrates for practical, high efficiency solar cells Goyal, A.; Norton, D. P.; Paranthaman, M. Future generation photovoltaic technologies, AIP Conference Proceedings https://doi.org/10.1063/1.53462	conference	January 1997
Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe₂O₄ Ohta, J.; Mitamura, K.; Kobayashi, A. Solid State Communications, Vol. 137, Issue 4, p. 208-211 https://doi.org/10.1016/j.ssc.2005.11.015	journal	January 2006
Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation Trampert, Achim Physica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issue 2-4, p. 1119-1125 https://doi.org/10.1016/S1386-9477(02)00317-X	journal	March 2002
InGaN‐GaN based light‐emitting diodes over (111) spinel substrates Yang, J. W.; Chen, Q.; Sun, C. J. Applied Physics Letters, Vol. 69, Issue 3 https://doi.org/10.1063/1.118063	journal	July 1996
Metal-oxide interfaces at the nanoscale Zhou, Guangwen Applied Physics Letters, Vol. 94, Issue 23 https://doi.org/10.1063/1.3154546	journal	June 2009
Lattice-matched HfN buffer layers for epitaxy of GaN on Si Armitage, R.; Yang, Qing; Feick, H. Applied Physics Letters, Vol. 81, Issue 8 https://doi.org/10.1063/1.1501447	journal	August 2002
Epitaxy and Molecular Organization on Solid Substrates Hooks, D. E.; Fritz, T.; Ward, M. D. Advanced Materials, Vol. 13, Issue 4 https://doi.org/10.1002/1521-4095(200102)13:4<227::AID-ADMA227>3.0.CO;2-P	journal	February 2001
Epitaxial growth in large‐lattice‐mismatch systems Zheleva, Tsvetanka; Jagannadham, K.; Narayan, J. Journal of Applied Physics, Vol. 75, Issue 2 https://doi.org/10.1063/1.356440	journal	January 1994
New frontiers in thin film growth and nanomaterials Narayan, Jagdish Metallurgical and Materials Transactions B, Vol. 36, Issue 1 https://doi.org/10.1007/s11663-005-0001-8	journal	February 2005

Cited By (1)

Lattice matched crystalline substrates for cubic nitride semiconductor growth Norman, Andrew; Ptak, Aaron Joseph; McMahon, William Edwin https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8961687 US Patent Document 8,961,687	patent	February 2015

Similar Records

Lattice matched semiconductor growth on crystalline metallic substrates

Patent · Tue Nov 05 00:00:00 EST 2013 · OSTI ID:1171096

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

Patent · Tue Aug 13 00:00:00 EDT 2013 · OSTI ID:1171096

Norman, Andrew G; Ptak, Aaron J

Group-III nitride devices and systems on IBAD-textured substrates

Patent · Tue Mar 26 00:00:00 EDT 2019 · OSTI ID:1171096

Matias, Vladimir

Related Subjects

36 MATERIALS SCIENCE

Title: Lattice matched crystalline substrates for cubic nitride semiconductor growth

Citation Formats

References (97)

Cited By (1)

Similar Records

Related Subjects