Low-temperature MOCVD growth of oriented PbZr{sub x}Ti{sub 1-x}O{sub 3} thin films on Si substrates.
Polycrystalline Pb(Zr{sub 0.6}Ti{sub 0.4})O{sub 3} (PZT) thin films, 3000-6000 {angstrom} thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO{sub 2}/Si substrates at temperatures as low as 450-525 C. Random and (111)-oriented, or occasionally (100)-oriented, PZT films can be deposited directly on (111)Pt/Ti/SiO{sub 2}/Si. In addition, highly (100)-oriented films can be deposited consistently by using 150-250 {angstrom} thick (100)-oriented PbTiO{sub 3} (PT) or TiO{sub 2} as a template. Films were characterized by X-ray diffraction, electron microscopy, and electrical measurements. The as-grown (100)-oriented films on (111)Pt/TiSiO{sub 2}/Si substrates exhibited dielectric constants ({var_epsilon}{sub r}) of up to 600, remnant polarization (P{sub r}) of 40 {micro}C/cm{sup 2}, coercive field of 55 kV/cm, and breakdown field of 2-6 x 10{sub 7} V/m.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10548
- Report Number(s):
- ANL/ET/CP-95225; TRN: AH200126%%397
- Resource Relation:
- Conference: 100th Annual Meeting of the American Ceramic Society, Cincinnati, OH (US), 05/03/1998--05/06/1998; Other Information: PBD: 8 May 1998
- Country of Publication:
- United States
- Language:
- English
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