skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cryogenic Etching of Silicon: An Alternative Method for Fabrication of Vertical Microcantilever Master Molds

Journal Article · · Journal of Microelectromechanical Systems
OSTI ID:1045300

This paper examines the use of deep reactive ion etching of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of an SiO{sub x}F{sub y} polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the O{sub 2} flow rate and the capacitively coupled plasma power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using electron-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 ??m , and 2 ??m.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
DE-AC05-00OR22725
OSTI ID:
1045300
Journal Information:
Journal of Microelectromechanical Systems, Vol. 19, Issue 1; ISSN 1057-7157
Country of Publication:
United States
Language:
English

Similar Records

Feature scale model of Si etching in SF{sub 6}/O{sub 2}/HBr plasma and comparison with experiments
Journal Article · Wed Mar 15 00:00:00 EST 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:1045300

Etching of high aspect ratio features in Si using SF{sub 6}/O{sub 2}/HBr and SF{sub 6}/O{sub 2}/Cl{sub 2} plasma
Journal Article · Tue Nov 15 00:00:00 EST 2005 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:1045300

XeF2 vapor phase silicon etch used in the fabrication of movable SOI structures.
Conference · Fri Oct 01 00:00:00 EDT 2010 · OSTI ID:1045300