Feature scale model of Si etching in SF{sub 6}/O{sub 2}/HBr plasma and comparison with experiments
- Department of Chemical Engineering, University of California, Santa Barbara, California 93106 (United States)
We have developed a semiempirical feature scale model of Si etching in SF{sub 6}/O{sub 2}/HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF{sub 6} and SF{sub 6}/O{sub 2} plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF{sub 6}/O{sub 2} plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. Addition of SF{sub 6} to HBr discharge increases the etch rate through chemical etching that produces volatile SiBr{sub 4-x}F{sub x} etch products and ion-enhanced chemical sputtering of fluorinated and brominated Si surfaces by F-containing ions.
- OSTI ID:
- 20777053
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 24, Issue 2; Other Information: DOI: 10.1116/1.2173268; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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