Thermally robust optical semiconductor devices using molecular beam epitaxy grown AlGaInAs
In FY96, they proposed and demonstrated a thermally robust semiconductor optical amplifier at 1.5 {micro}m wavelength. The novel contributions were the use of a thermally robust gain medium at 1.5 {micro}m wavelength and the use of a highly thermally conductive dielectric used in the fabrication of the SOA. The devices possessed high gain, over 30 dB, and thermally robust behavior in pulsed operation from 60 to 80 C. In FY97, they proposed and demonstrated the necessary components in a thermally robust long wavelength vertical cavity surface emitting laser (VCSEL) diode. A highly thermally conductive and high reflectivity mirror process was developed for the 1.3 {micro}m or 1.5 {micro}m wavelength region. The thermal conductivity is several times larger than other published work and the reflectivity is greater than 99%. Thermally robust gain media, AlGaInAs/InP quantum wells, were developed at 1.3 and 1.5 {micro}m wavelengths for incorporation into the thermally robust, long wavelength VCSEL devices. Also, a unique and compact high-speed fiber optics package was developed for long wavelength semiconductor optical amplifiers (SOA) and laser diodes.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 9794
- Report Number(s):
- UCRL-ID-129086; YN0100000; 96-ERD-058; YN0100000; 96-ERD-058; TRN: AH200125%%167
- Resource Relation:
- Other Information: PBD: 1 Dec 1997
- Country of Publication:
- United States
- Language:
- English
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