Origin of charge density at LaAlO3-on-SrTiO3 heterointerfacespossibility of intrinsic doping
Journal Article
·
· Submitted to Physical Review Letters
OSTI ID:979045
As discovered by Ohtomo et al., a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.
- Research Organization:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 979045
- Report Number(s):
- SLAC-PUB-13944; TRN: US201010%%362
- Journal Information:
- Submitted to Physical Review Letters, Journal Name: Submitted to Physical Review Letters
- Country of Publication:
- United States
- Language:
- English
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