Silicon Carbide Temperature Monitor Measurements at the High Temperature Test Laboratory
Silicon carbide (SiC) temperature monitors are now available for use as temperature sensors in Advanced Test Reactor (ATR) irradiation test capsules. Melt wires or paint spots, which are typically used as temperature sensors in ATR static capsules, are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that may have occurred during irradiation. As part of the efforts initiated by the ATR National Scientific User Facility (NSUF) to make SiC temperature monitors available, a capability was developed to complete post-irradiation evaluations of these monitors. As discussed in this report, the Idaho National Laboratory (INL) selected the resistance measurement approach for detecting peak irradiation temperature from SiC temperature monitors. This document describes the INL efforts to develop the capability to complete these resistance measurements. In addition, the procedure is reported that was developed to assure that high quality measurements are made in a consistent fashion.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- DOE - NE
- DOE Contract Number:
- DE-AC07-05ID14517
- OSTI ID:
- 974782
- Report Number(s):
- INL/EXT-10-17608; TRN: US1002589
- Country of Publication:
- United States
- Language:
- English
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