Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

Journal Article · Mon Aug 09 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124280· OSTI ID:9714

Ashby, Carol I.H.; Baca, Albert G; Chang, P -C; Hafich, M J; Hammons, B E; Zavadil, Kevin R

A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 9714
• Report Number(s): SAND99-2078J; TRN: AH200125%%147
• Journal Information: Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 9 Aug 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
DEPOSITION
DIELECTRIC MATERIALS
ENCAPSULATION
HETEROJUNCTIONS
PASSIVATION
PHOTOLUMINESCENCE
PLASMA
SULFUR
TRANSISTORS