Pushing EUV lithography development beyond 22-nm half pitch
Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning that conventional illumination is of limited utility for sub-22-nm development. In general resolution enhancing illumination encompasses increased coherence. We study the effect of this increased coherence on line-edge roughness, which along with resolution is another crucial factor in sub-22-nm resist development.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 971185
- Report Number(s):
- LBNL-2288E; TRN: US201003%%624
- Journal Information:
- Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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