skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

Abstract

Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

Authors:
 [1];  [2];  [3]
  1. Los Alamos National Laboratory
  2. ORNL
  3. CORNELL U.
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
956658
Report Number(s):
LA-UR-08-07983; LA-UR-08-7983
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US201016%%2343
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 104; Journal Issue: 11; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; ANNEALING; BEHAVIOR; DISLOCATIONS; EPITAXY; FILMS; MATERIALS; NEUTRON DIFFRACTION; ORIENTATION; OXIDES; OXYGEN; PEROVSKITE; RELAXATION; SCATTERING; SILICON; STRAINS; STRONTIUM TITANATES; SUBSTRATES; THICKNESS; WIDTH

Citation Formats

Hawley, Marilyn E, Biegalski, Michael D, and Schlom, Darrell G. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. United States: N. p., 2008. Web.
Hawley, Marilyn E, Biegalski, Michael D, & Schlom, Darrell G. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. United States.
Hawley, Marilyn E, Biegalski, Michael D, and Schlom, Darrell G. 2008. "Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3". United States. https://www.osti.gov/servlets/purl/956658.
@article{osti_956658,
title = {Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3},
author = {Hawley, Marilyn E and Biegalski, Michael D and Schlom, Darrell G},
abstractNote = {Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.},
doi = {},
url = {https://www.osti.gov/biblio/956658}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 104,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2008},
month = {Tue Jan 01 00:00:00 EST 2008}
}