Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3
Abstract
Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.
- Authors:
-
- Los Alamos National Laboratory
- ORNL
- CORNELL U.
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 956658
- Report Number(s):
- LA-UR-08-07983; LA-UR-08-7983
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US201016%%2343
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 11; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANISOTROPY; ANNEALING; BEHAVIOR; DISLOCATIONS; EPITAXY; FILMS; MATERIALS; NEUTRON DIFFRACTION; ORIENTATION; OXIDES; OXYGEN; PEROVSKITE; RELAXATION; SCATTERING; SILICON; STRAINS; STRONTIUM TITANATES; SUBSTRATES; THICKNESS; WIDTH
Citation Formats
Hawley, Marilyn E, Biegalski, Michael D, and Schlom, Darrell G. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. United States: N. p., 2008.
Web.
Hawley, Marilyn E, Biegalski, Michael D, & Schlom, Darrell G. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. United States.
Hawley, Marilyn E, Biegalski, Michael D, and Schlom, Darrell G. 2008.
"Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3". United States. https://www.osti.gov/servlets/purl/956658.
@article{osti_956658,
title = {Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3},
author = {Hawley, Marilyn E and Biegalski, Michael D and Schlom, Darrell G},
abstractNote = {Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.},
doi = {},
url = {https://www.osti.gov/biblio/956658},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 104,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2008},
month = {Tue Jan 01 00:00:00 EST 2008}
}