skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Jefferson Lab IR demo FEL photocathode quantum efficiency scanner

Conference ·
OSTI ID:954830

Jefferson Laboratory's Free Electron Laser (FEL) incorporates a cesiated gallium arsenide (GaAs) DC photocathode gun as its electron source. By using a setof scanning mirrors, the surface of the GaAs wafer is illuminated with a 543.5nm helium-neon laser. Measuring the current flow across the biased photocathodegenerates a quantum efficiency (QE) map of the 1-in. diameter wafer surface. The resulting QE map provides a very detailed picture of the efficiency of thewafer surface. By generating a QE map in a matter of minutes, the photocathode scanner has proven to be an exceptional tool in quickly determining sensitivityand availability of the photocathode for operation.

Research Organization:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-84ER40150
OSTI ID:
954830
Report Number(s):
JLAB-ACC-01-47; TRN: US1004609
Resource Relation:
Conference: Talk compiled for 22nd International Free Electron Laser Conference And 7th FEL Users Workshop, 13-18 Aug 2000, Durham, North Carolina
Country of Publication:
United States
Language:
English