Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping
The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 951300
- Report Number(s):
- BNL-82184-2009-CP; NN2001000; TRN: US0902166
- Resource Relation:
- Conference: IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025
- Country of Publication:
- United States
- Language:
- English
Similar Records
Internal Electric-Field-Lines Distribution in Cdznte Detectors Measured Using X-ray Mapping
Progress in the development of large-area modular 64 x 64 CdZnTe imaging arrays for nuclear medicine