Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9498
- Report Number(s):
- SAND99-2027J; TRN: AH200124%%292
- Journal Information:
- Applied Physics Letters, Other Information: Submitted to Applied Physics Letters; PBD: 4 Aug 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
GaInNAs laser gain
Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers
Journal Article
·
Mon Nov 01 00:00:00 EST 1999
· Applied Physics Letters
·
OSTI ID:9498
+2 more
GaInNAs laser gain
Conference
·
Tue May 23 00:00:00 EDT 2000
·
OSTI ID:9498
+2 more
Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers
Journal Article
·
Fri May 01 00:00:00 EDT 1992
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:9498