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Title: Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

Conference ·
OSTI ID:941428

Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the 0.3 numerical aperture SEMATECH Berkeley MET operating as a resist and mask test center. Here they present an update on the tool summarizing some of the latest test and characterization results. they provide an update on the long-term aberration stability of the tool and present line-space imaging in chemically amplified photoresist down to the 20-nm half-pitch level. Although resist development has shown substantial progress in the area of resolution, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of mask contributors to the LER observed from the SEMATECH Berkeley microfield tool.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
Materials Sciences Division
DOE Contract Number:
DE-AC02-05CH11231
OSTI ID:
941428
Report Number(s):
LBNL-241E; TRN: US200825%%562
Resource Relation:
Conference: EIPBN 2008, Portland, OR, May 27-30, 2008
Country of Publication:
United States
Language:
English

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