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Title: EUV mask reflectivity measurements with micro-scale spatial resolution

Abstract

The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
940567
Report Number(s):
LBNL-1104E
TRN: US200825%%775
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: SPIE Emerging Lithographic Technologies XII, San Jose, CA, February 26-28, 2008
Country of Publication:
United States
Language:
English
Subject:
36; AMPLITUDES; DEFECTS; DETECTION; LASERS; MICROSCOPES; REFLECTIVITY; REPAIR; SCANNING ELECTRON MICROSCOPY; SENSITIVITY; SPATIAL RESOLUTION; SURFACE CONTAMINATION; WAVELENGTHS; EUV reflectivity micron scale

Citation Formats

Goldberg, Kenneth A, Rekawa, Senajith B, Kemp, Charles D, Barty, Anton, Anderson, Erik, Kearney, Patrick, and Han, Hakseung. EUV mask reflectivity measurements with micro-scale spatial resolution. United States: N. p., 2008. Web.
Goldberg, Kenneth A, Rekawa, Senajith B, Kemp, Charles D, Barty, Anton, Anderson, Erik, Kearney, Patrick, & Han, Hakseung. EUV mask reflectivity measurements with micro-scale spatial resolution. United States.
Goldberg, Kenneth A, Rekawa, Senajith B, Kemp, Charles D, Barty, Anton, Anderson, Erik, Kearney, Patrick, and Han, Hakseung. 2008. "EUV mask reflectivity measurements with micro-scale spatial resolution". United States. https://www.osti.gov/servlets/purl/940567.
@article{osti_940567,
title = {EUV mask reflectivity measurements with micro-scale spatial resolution},
author = {Goldberg, Kenneth A and Rekawa, Senajith B and Kemp, Charles D and Barty, Anton and Anderson, Erik and Kearney, Patrick and Han, Hakseung},
abstractNote = {The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.},
doi = {},
url = {https://www.osti.gov/biblio/940567}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Feb 01 00:00:00 EST 2008},
month = {Fri Feb 01 00:00:00 EST 2008}
}

Conference:
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