A Comparison of Photoresist Resolution Metrics using 193 nm and EUV Lithography
Image blur due to chemical amplification represents a fundamental limit to photoresist performance and manifests itself in many aspects of lithographic performance. Substantial progress has been made in linking image blur with simple resolution metrics using EUV lithography. In this presentation, they examine performance of 193 nm resist and EUV resist systems using modulation transfer function, corner rounding, and other resolution metrics. In particular, they focus on cross-comparisons in which selected EUV and 193 nm resist are evaluated using both EUV and 193 nm lithography. Simulation methods linking 193 nm and EUV performance will be described as well. Results from simulation indicate that image blur in current generation 193 nm photoresists is comparable to that of many EUV resists, but that ultra-low diffusion materials designs used in very high resolution EUV resists can result in substantially lower blur. In addition to detailing correlations between EUV and 193 nm experimental methods, they discuss their utility in assessing performance needs of future generation photoresists.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Materials Sciences Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 934967
- Report Number(s):
- LBNL-621E-Ext-Abs; TRN: US200815%%114
- Resource Relation:
- Conference: SPIE Advanced Lithography, San Jose, CA, Feb. 24-29, 2008
- Country of Publication:
- United States
- Language:
- English
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