Plastic deformation in Al (Cu) interconnects stressed by electromigration and studied by synchrotron polychromatic X-ray microdiffraction

Journal Article · Wed May 14 00:00:00 EDT 2008 · Journal of Applied Physics

OSTI ID:929698

Source, Advanced Light; UCLA,; Chen, Kai; Chen, Kai; Tamura, Nobumichi; Valek, Bryan C; Tu, King-Ning

We report here an in-depth synchrotron radiation based white beam X-ray microdiffraction study of plasticity in individual grains of an Al (Cu) interconnect during the early stage of electromigration. The study shows a rearrangement of the geometrically necessary dislocations (GND) in bamboo typed grains during that stage. We find that about 90percent of the GNDs are oriented so that their line direction is the closest to the current flow direction. In non-bamboo typed grains, the Laue peak positions shift, indicating that the grains rotate. An analysis in terms of force directions has been carried out and is consistent with observed electromigration induced grain rotation and bending.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: Advanced Light Source Division
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 929698
• Report Number(s): LBNL-346E; TRN: US0803514
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics
• Country of Publication: United States
• Language: English

Related Subjects

36
BAMBOO
BENDING
DEFORMATION
DISLOCATIONS
ELECTROPHORESIS
PLASTICITY
PLASTICS
ROTATION
SYNCHROTRON RADIATION
SYNCHROTRONS
synchrotron
X-ray microdiffraction
electromigration