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Title: Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength

Abstract

The ion beam deposition of (NbTa)2O5 has been investigated for realizing high reflectance multilayer stacks of high damage threshold for applications in the engineering of dielectric gratings for use at 800 nm. Deposition conditions were optimized to yield fully oxidized films as determined from x-ray photoelectron spectroscopy (XPS). The film properties were also investigated using spectroscopic ellipsometry, and spectrophotometry to determine their refractive index and thickness respectively. Damage threshold testing was performed on single films using an amplified Ti:Sapphire laser producing a train of 170 ps pulses at a wavelength of 800 nm with an average energy of 100 mJ. The laser output was focused at the surface of the samples via a 0.5 m focal length lens to generate fluences ranging from 0 to 9 J/cm{sup 2}. At the optimum deposition conditions for highest optical quality and damage threshold, high reflector stacks of (NbTa){sub 2}O{sub 5}/SiO2 were fabricated. These stacks were employed to fabricate dielectric gratings with 1740 l/mm for use with 800 nm light. At an input angle of 8{sup o} from Littrow and a wavelength from 770 to 830 nm, >90% diffraction efficiency is achieved, with peak diffraction efficiency of >97%. The demonstration of dielectric gratings atmore » 800 nm is opening the pathway to significantly increase the power handling capabilities of grating compressors for picosecond and femtosecond chirped pulse amplifications systems.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
929161
Report Number(s):
UCRL-CONF-221886
TRN: US200815%%212
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Presented at: Boulder Damage Symposium, Boulder, CO, United States, Sep 25 - Sep 27, 2006
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; COMPRESSORS; DEPOSITION; DIELECTRIC MATERIALS; DIFFRACTION; EFFICIENCY; ELLIPSOMETRY; ION BEAMS; LASERS; OPENINGS; REFRACTIVE INDEX; SPECTROPHOTOMETRY; TESTING; THICKNESS; WAVELENGTHS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Menoni, C S, Patel, D, Brizuela, F, Rocca, J J, Nguyen, H T, and Britten, J A. Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength. United States: N. p., 2006. Web.
Menoni, C S, Patel, D, Brizuela, F, Rocca, J J, Nguyen, H T, & Britten, J A. Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength. United States.
Menoni, C S, Patel, D, Brizuela, F, Rocca, J J, Nguyen, H T, and Britten, J A. 2006. "Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength". United States. https://www.osti.gov/servlets/purl/929161.
@article{osti_929161,
title = {Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength},
author = {Menoni, C S and Patel, D and Brizuela, F and Rocca, J J and Nguyen, H T and Britten, J A},
abstractNote = {The ion beam deposition of (NbTa)2O5 has been investigated for realizing high reflectance multilayer stacks of high damage threshold for applications in the engineering of dielectric gratings for use at 800 nm. Deposition conditions were optimized to yield fully oxidized films as determined from x-ray photoelectron spectroscopy (XPS). The film properties were also investigated using spectroscopic ellipsometry, and spectrophotometry to determine their refractive index and thickness respectively. Damage threshold testing was performed on single films using an amplified Ti:Sapphire laser producing a train of 170 ps pulses at a wavelength of 800 nm with an average energy of 100 mJ. The laser output was focused at the surface of the samples via a 0.5 m focal length lens to generate fluences ranging from 0 to 9 J/cm{sup 2}. At the optimum deposition conditions for highest optical quality and damage threshold, high reflector stacks of (NbTa){sub 2}O{sub 5}/SiO2 were fabricated. These stacks were employed to fabricate dielectric gratings with 1740 l/mm for use with 800 nm light. At an input angle of 8{sup o} from Littrow and a wavelength from 770 to 830 nm, >90% diffraction efficiency is achieved, with peak diffraction efficiency of >97%. The demonstration of dielectric gratings at 800 nm is opening the pathway to significantly increase the power handling capabilities of grating compressors for picosecond and femtosecond chirped pulse amplifications systems.},
doi = {},
url = {https://www.osti.gov/biblio/929161}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jun 02 00:00:00 EDT 2006},
month = {Fri Jun 02 00:00:00 EDT 2006}
}

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