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Title: Ion photon emission microscope

Patent ·
OSTI ID:921316

An ion beam analysis system that creates microscopic multidimensional image maps of the effects of high energy ions from an unfocussed source upon a sample by correlating the exact entry point of an ion into a sample by projection imaging of the ion-induced photons emitted at that point with a signal from a detector that measures the interaction of that ion within the sample. The emitted photons are collected in the lens system of a conventional optical microscope, and projected on the image plane of a high resolution single photon position sensitive detector. Position signals from this photon detector are then correlated in time with electrical effects, including the malfunction of digital circuits, detected within the sample that were caused by the individual ion that created these photons initially.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
6,552,338
Application Number:
09/882,400
OSTI ID:
921316
Country of Publication:
United States
Language:
English

References (2)

A new approach to nuclear microscopy: the ion–electron emission microscope journal September 1999
High‐resolution imaging with a two‐dimensional resistive anode photon counter journal May 1982

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