Method and apparatus for forming conformal SiN.sub.x films
Patent
·
OSTI ID:920890
- Littleton, CO
A silicon nitride film formation method includes: Heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-99GO10337
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- 7,300,890
- Application Number:
- 10/621,712
- OSTI ID:
- 920890
- Country of Publication:
- United States
- Language:
- English
Coverage properties of silicon nitride film prepared by the Cat-CVD method
|
journal | April 2003 |
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