III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

Kurtz, Steven Ross; Hargett, Terry W; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

doi:10.2172/918384

Title: III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

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Abstract

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and havemore »« less

Authors:: Kurtz, Steven Ross; Hargett, Terry W; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

Publication Date:: Mon Dec 01 00:00:00 EST 2003

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 918384

Report Number(s):: SAND2003-4287
TRN: US200818%%374

DOE Contract Number:: AC04-94AL85000

Resource Type:: Technical Report

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; ALLOYS; COMMUNICATIONS; EFFICIENCY; ELECTROLUMINESCENCE; EXCITONS; OPTICAL FIBERS; SANDIA NATIONAL LABORATORIES; SEMICONDUCTOR DEVICES; SOLAR CELLS; SUBSTRATES; TARGETS; TRANSPORT; WAVELENGTHS

Citation Formats


                    Kurtz, Steven Ross, Hargett, Terry W, Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, and Peake, Gregory Merwin. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report..  United States: N. p., 2003. 
        Web.  doi:10.2172/918384.

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                    Kurtz, Steven Ross, Hargett, Terry W, Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, & Peake, Gregory Merwin. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report..  United States.  https://doi.org/10.2172/918384

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                    Kurtz, Steven Ross, Hargett, Terry W, Serkland, Darwin Keith, Waldrip, Karen Elizabeth, Modine, Normand Arthur, Klem, John Frederick, Jones, Eric Daniel, Cich, Michael Joseph, Allerman, Andrew Alan, and Peake, Gregory Merwin. 2003.  
        "III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.".  United States.  https://doi.org/10.2172/918384.  https://www.osti.gov/servlets/purl/918384.

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@article{osti_918384,

  title        = {III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.},

  author       = {Kurtz, Steven Ross and Hargett, Terry W and Serkland, Darwin Keith and Waldrip, Karen Elizabeth and Modine, Normand Arthur and Klem, John Frederick and Jones, Eric Daniel and Cich, Michael Joseph and Allerman, Andrew Alan and Peake, Gregory Merwin},

  abstractNote = {The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.},

  doi          = {10.2172/918384},

  url          = {https://www.osti.gov/biblio/918384},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Dec 01 00:00:00 EST 2003},

  month        = {Mon Dec 01 00:00:00 EST 2003}

}

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