Angular Dependence of the Photoelectron Energy Distribution of InP(100) and GaAs(100) Negative Electron Affinity Photocathodes

Lee, Dong-Ick; Sun, Yun; Lu, Zhi; Sun, Shiyu; Pianetta, Piero

doi:10.1063/1.2805775

Title: Angular Dependence of the Photoelectron Energy Distribution of InP(100) and GaAs(100) Negative Electron Affinity Photocathodes

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2805775· OSTI ID:918013

Lee, Dong-Ick; Sun, Yun; Lu, Zhi; Sun, Shiyu; Pianetta, Piero

Energy distribution of the photoelectrons from InP(100) photocathodes are investigated with a photon energy range from 0.62eV to 2.76eV. When the photon energy is less than 1.8eV, only electrons emitted from the Gamma valley are observed in the energy distribution curves (EDC). At higher photon energies, electrons from the L valley are observed. The angular dependence of the electron energy distributions of InP and GaAs photocathodes are studied and compared. The electrons emitted from the L valley have a larger angular spread than the ones from the Gamma valley due to the larger effective mass of the L valley minimum.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-76SF00515

OSTI ID:: 918013

Report Number(s):: SLAC-PUB-12881; APPLAB; TRN: US0805208

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Title: Angular Dependence of the Photoelectron Energy Distribution of InP(100) and GaAs(100) Negative Electron Affinity Photocathodes

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